Contact Geometrical Study for Top Emitting 980 nm InGaAs/GaAsP Vertical-Cavity Surface Emitting Lasers

Chaqmaqchee, Faten A. (2021) Contact Geometrical Study for Top Emitting 980 nm InGaAs/GaAsP Vertical-Cavity Surface Emitting Lasers. ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY, 9 (2). pp. 112-116. ISSN 2410-9355

Text (Research Artical) ARO.10845-Vol9.No2.2021.ISSUE16-PP 112-116.pdf - Published Version Available under License Creative Commons Attribution Non-commercial Share Alike. Download (2MB)

Abstract

Geometrical contacts of a double mesa structure with 16 rows ×15 columns arrays of top emitting GaAs based 980 nm vertical cavity surface emitting lasers (VCSELs) are fabricated and characterized. In this paper, 5 strained In0.22Ga0.78As/Ga0.9AsP0.1 quantum wells (QWs) within λ/2 thick cavity have been employed. The top and the bottom epitaxially grown mirrors are based on the linear graded Al0.9Ga0.1As/GaAs distributed Bragg reflectors (DBRs) with 20.5 and 37 periods, respectively. Static parameters including threshold currents, rollover currents, maximum optical output power and wall-plug efficiency are extracted from light out power-current-voltage (LIV) of VCSELs with fixed oxide aperture diameter of ∅~ 6 μm and various mesa2 diameters. In addition, spectral emission for 980 nm VCSELs of oxide aperture between ∅~ 6 and 19 μm and with fixed ∅~ 6 μm and different bias currents are analyzed. The highest optical output power of around 33 dBm is observed at bias current of 0.8 mA for short−reach optical interconnect applications.

Item Type:	Article
Uncontrolled Keywords:	Vertical-cavity surface emitting laser, AlGaAs Distributed Bragg reflectors, InGaAs/GaAsP quantum wells, Static characterization
Subjects:	Q Science > QC Physics
Divisions:	ARO-The Scientific Journal of Koya University > VOL 9, NO 2 (2021)
Depositing User:	Dr Salah Ismaeel Yahya
Date Deposited:	29 Mar 2022 06:26
Last Modified:	29 Mar 2022 06:26
URI:	http://eprints.koyauniversity.org/id/eprint/300

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